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N-Implantation Induced Phase Separation in Zr-Cu Film
by S. Muraishi and H. Naito
 
 
Publisher:TMS
Product Format:PDF
Pages:3-8
Date published:06/01/2007
Parent Publication:Surfaces and Interfaces in Nanostructured Materials II (Electronic Format)
 
TMS Member price:
10.00
Non-member price: 25.00
TMS Student Member price: 10.00
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Description
N-implantation has been conducted for Zr and Zr-Cu films to investigate the phase-separation sequence depending on the different formation enthalpy of nitrides, ZrN and Cu3N. The films of Zr and Zr-12at%Cu have been prepared by ion beam sputtering and respective films consist of hcp-Zr and nano-crystalline hcp-Zr(Cu). Penetration of N2+ with the beam energy of 60keV induced surface nitriding of Zr-Cu films with the thickness of 100 nm in depth. The XPS depth profiling shows the composition of (Zr, Cu)-47at%N in maximum with dose of 2.5×1017 ions/cm2. SAED pattern reveals the formation of Zr-rich nitride and Cu-rich bcc phases, which implying the phase separated nano-complex with increasing N concentration.

Relevant Keyword(s)
Nanotechnology



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